CJM1206 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS
CJM1206 P-Channel Power MOSFET
DFNWB2*2-6L-J
V_(BR)DSS
-12V
R_DS(on)MAX
45 mΩ@-4.5V
60 mΩ@-2.5V
90 mΩ@-1.8V
I_D
-6A
1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
DESCRIPTION
The CJM1206 uses advanced trench technology to provide
excellent R_{DS(on) ,} low gate charge and operation with low gate voltage.
. This device is suitable for use as a load switching application
and a wide variety of other applications.
FEATURES
 Advanced trench MOSFET process technology
 Ultra low on-resistance with low gate charge
0$5.,1*
APPLICATIONS
 PWM application
 Load switch
 Battery charge in cellular handset
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM*
R_θJA
T_j
T_STG
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-12
±8
-6
-20
357
150
-55 ~+150
Unit
V
A
℃/W
℃
C,May,2015