CJLJF3117PB Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-channel MOSFET and Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-U Power Management MOSFETs-Schottky
CJLJF3117PB P-channel MOSFET and Schottky Barrier Diode
V_(BR)DSS/VR
-20V
R_DS(on)MAX
100mΩ@-4.5V
135mΩ@-2.5V
I_D/I_O
-3.3A
250mΩ@-1.8V
20V
/
0.5A
DFNWB2×2-6L-U
FEATURE
z Independent Pinout to Each Device to
Each Device to Ease Circuit Design
z High Current Schottky Diode
z Featuring a MOSFET and a
Schottky Barrier Diode
MARKING
APPLICATION
z Optimized for Portable Applications Like Cell Phones,
Digital Cameras,Media Players,etc
z DC-DC Buck Circuits
z Li-ion Battery Applications
z Color Display and Camera Flash Regulators
Equivalent Circuit
K GS
6
5
4
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
1
2
3
A
D
Symbol Para
meter
P-MOSFET
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current
I_DM*
Pulse Drain Current
Schottky Barrier Diode
V_RRM
Peak Repetitive Reverse Voltage
V_R
DC Blocking Voltage
I_O
Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-20
±8
-3.3
-10
20
20
0.5
0.75
83.3
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
A-2,May,2015