CJL8810 Datasheet, PDF (1/5 Pages) ZP Semiconductor – D ual N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL8810 Dual N-Channel MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
20mΩ@¹⁰V
22mΩ @4.5V
20V
24 ^mΩ@3.8V
7A
26mΩ@^2.5V
35mΩ@1.8V
SOT-23-6L
DESCRIPTION
The CJL8810 uses advanced trench technology to provide excellent
R_DS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM *
Thermal Resistance from Junction to Ambient
R_θJA ^**
Junction Temperature
T_j
Storage Temperature
T_stg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
T_L
*Repetitive rating：Pluse width limited by junction temperature.
**_{Surface mounted on FR4 board using 1 square inch pad size,1oz single-side copper.}
www.cj-elec.com
1
Value
20
±12
7
30
208.3
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
H,Aug,2015