CJL8205 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL8205 Dual N-Channel MOSFET
V_(BR)DSS
19 V
R_DS(on)MAX
I_D
25mΩ@4.5V
6A
32mΩ@2.5V
SOT-23-6L
FEATURE
z TrenchFET Power MOSFET
z Excellent R_DS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
MARKING
APPLICATION
z Battery Protection
z Load Switch
z Power Management
Equivalent Circuit
G1
D1,D2
G2
6
5
4
1
2
3
S1
D1,D2
S2
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
R_θJA
T_J
T_STG
T_L
Value
19
±10
6
25
357
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
℃/W
℃
℃
℃
A-2,May,2015