CJL3415 Datasheet, PDF (1/5 Pages) ZP Semiconductor – P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-L Plastic-Encapsulate MOSFETS
CJ/3415 ^{P-Channel 20V(D-S) MOSFET}
V_(BR)DSS
-20V
R_DS(on)MAX
50mΩ@-4.5V
60mΩ@-2.5V
73mΩ@-1. 8V
I_D
-4.0A
SOT-23-6L
FEATURE
Excellent R_DS(ON), low gate charge,low gate voltage
High power and current handing capability
APPLICATION
Load switch and in PWM applicatopns
MARKING:
Equivalent Circuit
PIN1
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t≤10s)
Pulsed Drain Current (note1)
Maximum Power Dissipation (t≤10s)
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
ValueUnit
-20
V
±8
-4.0
A
-30
A
0.35
W
357
150
-55 ~+150
 ℃/W
℃
℃
www.cj-elec.com
1
D,Aug,2015