CJK3401A Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Enhancement Mode Field Effect Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3401A P-Channel Enhancement Mode Field Effect Transistor
V_(BR)DSS
-30V
R_DS(on)MAX
60 mΩ@-10V
70 mΩ@-4.5V
85 mΩ@-2.5V
I_D
-4.2A
SOT-23-3L
1. GATE
2. SOURCE
3. DRAIN D
FEATURE
z High dense cell design for extremely low R_DS(ON)
z Exceptional on-resistance and maximum
DC current capability
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
D
Solid dot = Green molding compound device,
if none,the normal device.
G
S
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_STG
Value
-30
±12
-4.2
450
313
150
-55~+150
www.cj-elec.com
1
Unit
V
V
A
mW
℃/W
℃
℃
A-2,Apr,2015