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CJK2333 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
627-3L Plastic-Encapsulate MOSFETS
CJK 3-channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
28mΩ@-4.5V
-12V
32mΩ@-3.7V
40mΩ@-2.5V
-6A
63mΩ@-1.8V
150mΩ@-1.5V
SOT-23-3L
1. GATE
2. SOURCE
3. DRAIN
FEATURE
 TrenchFET Power MOSFET
 Excellent RDS(on) and Low Gate Charge
MARKING
APPLICATION
 DC/DC Converter
 Load Switch for Portable Devices
 Battery Switch
Equivalent Circuit
Solid dot = Green molding compound device,
if none,the normal device.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t=300µs)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
-12
±8
-6
-20
0.4
312.5
150
-55~ +150
Unit
V
V
A
A
W
℃/W
℃
℃
www.cj-elec.com
1
B,May,2015