CJE3139K Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJE3139K P-Channel MOSFET
V_(BR)DSS
-20V
R_DS(on)MAX
520 mΩ@-4.5V
700mΩ@-2.5V
950 mΩ(TYP)@-1.8V
I_D
-0.66A
SOT-523
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z Lead Free Product is Acquired
z Surface Mount Package
z P-Channel Switch with Low R_DS(on)
z Operated at Low Logic Level Gate Drive
MARKING
APPLICATION
z Load/Power Switching
z Interfacing, Logic Switching
z Battery Management for Ultra Small
Portable Electronics
Equivalent Circuit
D
G
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Typical Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (t_p=10μs)
Power Dissipation (note 1)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8” from case for 10 s)
S
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
T_L
Value
-20
±12
-0.66
-1.2
150
833
150
-55~+150
260
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
www.cj-elec.com
1
A,Sep,2015