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| CJD4435 Datasheet, PDF (1/4 Pages) ZP Semiconductor – P-Channel 30-V(D-S) MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate MOSFETS
CJD4435 P-Channel 30-V(D-S) MOSFET
V(BR)DSS
-30 9
RDS(on)MAX
24PÈ#-9
35PÈ#-9
ID
-9.1$
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
z Load Switch
z Battery Switch
TO-251-3L
1. GATE
2. DRAIN
3. SOURCE
1
2
3
MARKING
EQUIVALENT CIRCUIT
CJD4435= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings ( Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Power Dissipation
Maximum Power Dissipation
(note 1, Ta=25â)
PD
(note 2, Tc=25â)
Thermal Resistance from Junction to Ambient (tâ¤10S)
RθJA
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Value
-30
±20
-9.1
1
15
125
150
-55 ~+150
.
www.cj-elec.com
1
Unit
V
A
W
â/W
â
D,Apr,2016
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