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CJD30N10 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-256 Plastic-Encapsulate MOSFETS
CJ'30N10 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
100V
31mΩ@10V
30A
DESCRIPTION
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode fast recovery time.
TO-256
1. GATE
2. DRAIN
1
2
3
3. SOURCE
Desighed for high voltage, high speed switching applications such as
power supplies, converters, power motor controls and bridge circuits.
FEATURES
ï¬ High density cell design for ultra low RDS(on)
ï¬ Special process technology for high ESD capability
ï¬ Fully characterized avalanche voltage and current
ï¬ Excellent package for good heat dissipation
ï¬ Good stability and uniformity with high EAS
APPLICATIONS
ï¬ Hard switched and high frequency circuits
ï¬ Uninterruptible power supply
ï¬ Power switching application
MARKING
EQUIVALENT CIRCUIT
CJD30N10
XXX
CJD30N10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Code
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8ââ from case for 10s)
(1).EAS condition: VDD=50V,L=0.5mH, RG=25â¦, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
100
±20
30
120
156
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
â/W
â
â
â
www.cj-elec.com
1
A-1,Jul,2016
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