CJD05N60B Datasheet, PDF (1/4 Pages) ZP Semiconductor – N -Channel P ower MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD05N60B
V_(BR)DSS
600V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
2.5Ω@10V
5A
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
TO-251S
1. GATE
2. DRAIN
3. SOURCE
1
2
3
FEATURE
z High Current Rating
z Lower R_DS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter V_SD Specifications
z Avalanche Energy Specified
MARKING
CJD05N60B B
z XXX
CJD05N60B= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
EQUIVALENT CIRCUIT
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
P_D
R_θJA
T_J, T_STG
T_L
Value
600
±30
5
20
250
1.25
100
-55 ~+150
260
Unit
V
A
mJ
W
℃/W
℃
www.cj-elec.com
1
D,May,2016