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| CJD04N60B Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
ID
3.0Ω@10V
4A
TO-251S
General Description
This advanced high voltage MOSFET is designed to wighstand high
1. GATE
2. DRAIN
energy in the avalanche mode and switch efficiently.This new high energy 3. SOURCE
device also offers a drain-to-source diode wigh fast recovery time.Desighed
1
2
3
for high voltage,high speed switching applications such as power
supplies,converters,power motor controls and bridge circuits.
FEATURE
z High Current Rating
z Lower Rds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJD04N60B
z XXX
CJD04N60B = Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperure for Soldering Purposes ,
1/8âfrom Case for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
600
±30
4.0
16
260
100
150
-55 ~+150
260
www.cj-elec.com
1
Unit
V
A
mJ
â/W
â
B,May,2016
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