CJD04N60 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-2516Plastic-Encapsulate MOSFETS
CJD04N60 600V N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
600V
3.0Ω@10V
4A
TO-251S
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
1
2
3
FEATURE
z High Current Rating
z Lower R_ds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJD044N60
z _XXX
CJD04N60 = Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GSS
I_D
I_S
E_AS
R_θJA
T_J, T_STG
T_L
Value
600
±30
4.0
4.0
260
100
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
E,May,2016