CJD02N60 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
600V
4.4Ω@10V
2A
TO-251S
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
1. GATE
2. DRAIN
to withstand high energy in avalanche and commutation modes . The _{3. SOURCE}
new energy efficient design also offers a drain-to-source diode with a
1
2
3
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z I_DSS and V_DS(on) Specified at Elevated Temperature
MARKING
EQUIVALENT CIRCUIT
CJD02N60
z _XXX
CJD02N60 = Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±20
Continuous Drain Current
I_D
2
Pulsed Drain Current
I_DM
8
Single Pulsed Avalanche Energy*
E_AS
128
Power Dissipation
P_D
1.25
Thermal Resistance from Junction to Ambient
R_θJA
100
Junction Temperature
T_J
150
Storage Temperature
T_stg
-50 ~+150
*E_AS condition: T_j=25℃,V_DD=50V,L=64mH,I_AS=2A,R_G=25Ω, Starting T_J = 25°C
www.cj-elec.com
1
Unit
V
A
mJ
W
℃/W
℃
F,May,2016