CJCD2007 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007 Dual N-Channel MOSFET
V_(BR)DSS
20V
R_DS(on)MAX
I_D
20 mΩ@10V
22 mΩ@4.5V
24mΩ@3.8V
7A
26 mΩ@2.5V
35mΩ@1.8V
DFNWB2×3-6L-C
DESCRIPTION
The CJCD2007 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Symbol
V_DS
V_GS
I_D
I_DM *
R_θJA
T_j
T_stg
T_L
Value
20
±12
7
30
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
D,May,2015