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CJCD2005 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual N-Channel MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2Ã3-6L-C Plastic-Encapsulate MOSFETS
CJCD2005 Dual N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
13mΩ@10V
14mΩ @4.5V
20V
15.5mΩ@3.8V
8A
19 mΩ@2.5V
27mΩ@1.8V
DFNWB2Ã -6L-C
DESCRIPTION
The CJCD2005 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8ââ from case for 10 s)
*Repetitive ratingï¼Pluse width limited by junction temperature.
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
Value
20
±12
8
30
125
150
-55~+150
260
Unit
V
V
A
A
â/W
â
â
â
www.cj-elec.com
1
C,May,2015
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