CJB85N80 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

-,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2/7'
72/3ODVWLF(QFDSVXODWH026)(76
&-%1 1&KDQQHO3RZHU026)(7
V_(BR)DSS
R_DS(on)MAX
I_D
  9
^{Pȍ #9}
$
'(6&5,37,21
     The CJ%85N80 uses advanced trench technology and design to
provide excellent R_DS(on) with low gate charge. Good stability and
uniformity with high E_AS .This device is suitable for use in PWM,
load switching and general purpose applications.
TO-2-L

1. GATE
2. DRAIN
3. SOURCE



)($785(
z Advanced trench process technology
z Special designed for convertors and power controls
z High density cell design for ultra low R_DS(on)
z Fully characterized avalanche voltage and current
z Fast switching
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
$33/,&$7,21
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
 0$5.,1*      
       ( 4 8 ,9$ / (1 7 & ,5 &8,7
&-%1
YY

&-%1= Device code
6ROLG dot = Green molding compound device,
if none, the normal device
YY=Date Code
0D[LPXPUDWLQJV7_D ЯXQOHVVRWKHUZLVHQRWHG
3DUDPHWHU
6\PERO
9DOXH
Drain-Source voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current (note 1)
I_DM
Power Dissipation
Maximum Power Dissipation
(note 2 , T_a=25Я)
P_D
(note 3 , T_c=25Я)
Single Pulsed Avalanche Energy (note 4)
E_AS
Thermal Resistance from Junction to Ambient
R_șJA
Junction Temperature
T_j
Storage Temperature
T_stg
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. This test is performed with no heat sink at T_a=25Я.
3. This test is performed with infinite heat sink at T_c=25Я.
4. E_AS condition: T_j=25Я,V_DD=40V,V_GS=10V,L=0.5mH,R_g=25ȍ.
85
±20
80
320
2
170
620
62.5
150
-55 ~+150
8QLW
V
A
W
W
mJ
Я/W
Я
www.cj-elec.com
1$,-XO,201