CJB08N65 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate MOSFETS
CJB08N65
V_(BR)DSS
650V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
1.4Ω@10V
8A
TO-2-L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
 High Current Rating
 Lower R_DS(on)
 Lower Capacitance
 Lower Total Gate Charge
 Tighter V_SD Specifications
 Avalanche Energy Specified
1. GATE
2. DRAIN
3. SOURCE
MARKING
EQUIVALENT CIRCUIT
2
1
3
CJB08N65
XXX
CJB08N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
Duration for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J, T_STG
T_L
Value
650
±30
8
32
250
62.5
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,Apr,2016