CJAD2399 Datasheet, PDF (1/5 Pages) –

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB1x1-3L Plastic-Encapsulate MOSFETS
CJAD2399 P-Channel 20-V(D-S) MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
-20 V
135mΩ@-4.5V
-2A
170mΩ@-2.5V
DFNWB1x1-3L
3
D
1. GATE
21
2. SOURCE
3. DRAIN
FEATURE
z High power and current handing capability
APPLICATION
zLoad Switch for Portable Devices
z WM applications
MARKING
299
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤5s)
Junction Temperature
Storage Temperature
V_DS
V_GS
I_D
I_DM
I_S
P_D
R _θJA
T_J
T_stg
Value
-20
±12
-2
-10
-2.0
0.2
625
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
A-1,Apr,2016