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| CJAC10H03 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5Ã6-8L Plastic-Encapsulate MOSFETS
CJAC10H03
V(BR)DSS
30 V
N-Channel Power MOSFET
RDS(on)MAX
ID
2.5mΩ@10V
3.5mΩ@4.5V
100A
PDFNWB5Ã6-8L
DESCRIPTION
The CJAC10H03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
ï¬ High density cell design for ultra low RDS(ON)
ï¬ Fully characterized avalanche voltage and
ï¬ Excellent package for good heat dissipation
ï¬ Special process technology for high ESD
current
ï¬ Good stability and uniformity with high EAS
APPLICATIONS
capability
ï¬ SMPS and general purpose applications
ï¬ Hard switched and high frequency circuits
ï¬ Power switching application
ï¬ Uninterruptible power supply
MARKING
CJAC10H03 = Part No.
Solid dot=Pin1 indicator
XXX=Date Code
EQUIVALENT CIRCUIT
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Power Dissipation
IDM
PD (1)
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature Range
Tstg
Lead Temperature for Soldering Purposes(1/8ââ from case for 10s)
TL
(1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
Limit
30
±20
100
400
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
W
â/W
â
â
â
www.cj-elec.com
1
A-2,Mar,2016
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