CJAC10H02 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L Plastic-Encapsulate MOSFETS
CJAC10H0
V_(BR)DSS
20 V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
2.0mΩ@4.5V
2.4mΩ@2.5V
100A
PDFNWB5×6-8L
DESCRIPTION
The CJAC10H02 uses advanced trench technology and design
to provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
 High density cell design for ultra low R_DS(ON)
 Fully characterized avalanche voltage and
 Excellent package for good heat dissipation
 Special process technology for high ESD
current
 Good stability and uniformity with high E_AS
APPLICATIONS
capability
 SMPS and general purpose applications
 Hard switched and high frequency circuits
 Power switching application
 Uninterruptible power supply
MARKING
D
'
'
'
CJAC
10H02
XXX
6
S
6
*
CJAC10H02 = Part No.
Solid dot=Pin1 indicator
XXX=Code
EQUIVALENT CIRCUIT
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( T_a=25ć unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=15V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
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www.cj-elec.com
1
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD ^
RθJA
TJ
Tstg
TL
Limit
20
±12
10
40
240


150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-1,Jul,2016