CJAB25N03 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB25N03
V_(BR)DSS
30 V
DESCRIPTION
N-Channel Power MOSFET
R_DS(on)MAX
I_D
10mΩ@10V
14mΩ@4.5V
25A
PDFNWB3.3×3.3-8L
The CJAB25N03 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES
 Battery switch
 Load switch
 Good stability and uniformity with high E_AS
 Excellent package for good heat dissipation
 High density cell design for ultra low R_DS(ON)
 Fully characterized avalanche voltage and
 Special process technology for high ESD
capability
current
APPLICATIONS
 SMPS and general purpose applications
 Hard switched and high frequency circuits
MARKING
 Uninterruptible Power Supply
EQUIVALENT CIRCUIT
CJAB25N03 = Part No.
D
D
D
D
8
7
6
5
Solid dot=Pin1 indicator
XXX=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
1
2
3
4
S
S
S
G
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Single Pulsed Avalanche Energy
IDM
EAS(1)
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature Range
Tstg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
(1).EAS condition: VDD=15V,L=0.14mH, RG=25Ω, Starting TJ = 25°C
(2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
Limit
30
±20
25
100
70
1.5
83.3
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-5,Mar,2016