CJAA3139K Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03E Plastic-Encapsulate MOSFETS
CJAA3139K P-Channel MOSFET
V_(BR)DSS
-20V
R_DS(on)MAX
520 mΩ@-4.5V
700m Ω @ -2.5V
950 mΩ@-1.8V
I_D
-0.66A
WBFBP-03E
1.GATE
2.SOURCE
3.DRAIN
FEATURE
z Lead Free Product is Acquired
z Surface Mount Package
z P-Channel Switch with Low R_DS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Complementary to CJAA3134K
MARKING:
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small
Portable Electronics
z Logic Level Shift
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
T_L
Value
-20
±12
-0.66
-1.2
100
1250
150
-55~ 150
260
www.cj-elec.com
1
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
B ,Nov,2016