CJA9451 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-89-3L Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate MOSFETS
CJA9451
V_(BR)DSS
-20 V
P-Channel 20-V(D-S) MOSFET
R_DS(on)MAX
135mΩ@^-4.5V
240mΩ@-2.5V
I_D
-2.3A
SOT-89-3L
1. GATE
2. DRAIN
3. SOURCE
Description
The Advanced Power MOSFETs provide the desigher with the
best combination of fast switching, ruggedized device desigh, ultra low
on- resistance and cost-effectiveness.
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_j
T_stg
Value
-20
±12
-2.3
0.5
250
150
-55 ~+150
Unit
V
A
W
℃/W
℃
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1
E,Aug,2015