CJ8820 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820 Dual N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
I_D
21mΩ@10V
24mΩ@4.5V
20V
28mΩ@3.8V
7A
32mΩ@2.5V
50mΩ@1.8V
DESCRIPTION
The CJ8820 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge.
It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional
load switch,facilitated by its common-drain configuration.
MARKING
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
Symbol
V_DS
V_GS
I_D
I_DM *
R_θJA
T_j
T_stg
T_L
www.cj-elec.com
1
Value
20
±12
7
25
417
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
G,Apr,2015