CJ8810 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ8810 N-Channel MOSFET
V_(BR)DSS
20V
R_DS(on)MAX
26mΩ ^@10V
27mΩ @4.5V
30 ^mΩ@3.8V
33mΩ ^@2.5V
45mΩ @1.8V
FEATURE
z Surface Mount Package
z Low R _DS(on)
z ESD Protected Gate
MARKING
I_D
SOT-23
7A
1.GATE
2.SOURCE
3.DRAIN
APPLICATION
z Load/ Power Switching
z Small Portable Electronics
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
Symbol
V_DS
V_GS
I_D
I_DM *
R_θJA
T_j
T_stg
T_L
www.cj-elec.com
1
Value
20
±12
7
30
417
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
F,Apr,2015