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| CJ7252KDW Datasheet, PDF (1/6 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ7252KDW
V(BR)DSS
60 V
N Channel + P Channel Power MOSFET
RDS(on)MAX
5Ω@10V
5.3Ω@4.5V
ID
0.34A
SOT-363
-50V
8Ω@-10V
10Ω@-5V
-0.18A
DESCRIPTION
This N Channel + P Channel MOSFET has been designed using
advanced power trench process to optimize the RDS(ON).
FEATURE
z High-Side Switching
z Low Threshold
z Fast Switching Speed
MARKING: 75
APPLICATION
z Drivers:Relays, Solenoids, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
D1 G2 S2
6
54
1
2
3
S1 G1 D2
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
N-Channel MOSFET
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current -Continuous
IDM
Drain Current - Pulsed(Note1)
P- Channel MOSFET
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current -Continuous
IDM
Drain Current â Pulsed (Note1)
Power Dissipation, Temperature and Thermal Resistance
PD
Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient (Note2)
Tj
Junction Temperature
Tstg
Storage Temperature
TL
Lead Temperature
Value
60
±20
0.34
1.36
-50
±20
-0.18
-0.7
0.15
833
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
V
V
A
A
W
â/W
â
â
â
A-5,Mar,2016
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