CJ7203KDW Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-channel MOSFET and Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Power Management MOSFETs-Schottky
CJ7203KDW N-channel MOSFET and Schottky Barrier Diode
V_(BR)DSS/VR
R_DS(on)MAX
I_D/I_O
5Ω@10V
60V
340mA
5.3Ω@5V
40V
/
350mA
SOT-363
FEATURE
APPLICATION
z ^{High density cell design for Low R}DS（on）
z ^{High saturation current capability}
z ^{Load Switch for Portable Devices}
z DC/DC Converter
z Low Forward Voltage Drop
z ^{Guard Ring Construction for Transient Protection}
z ^{Negligible Reverse Recovery Time}
z ^{Low Capacitance}
MARKING
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol Parameter
1-MOSFET
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current
I_DM*
Pulse Drain Current
Schottky Barrier Diode
V_RRM
Peak Repetitive Reverse Voltage
V_R
DC Blocking Voltage
I_O
Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
60
±20
0.34
1.36
40
40
0.35
0.15
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
A-4,Mar,2016