CJ5853DCB Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-channel MOSFET and Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-Schottky
CJ5853DCB P-channel MOSFET and Schottky Barrier Diode
V_(BR)DSS/VR
-20V
20V
R_DS(on)MAX
110mΩ@-4.5V
160mΩ@-2.5V
240mΩ@-1.8V
/
I_D/I_O
-2.7A
0.5A
DFNWB3×2-08L-B
FEATURE
z Independent Pinout to Each Device to
Ease Circuit Design
z Ultra low V
F
z _{Featuring a MOSFET and a Schottky}
Barrier Diode
MARKING
APPLICATION
z Li-lon Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable，
Battery Powered Products
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
P-MOSFET
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current
I_DM*
Pulse Drain Current
Schottky Barrier Diode
V_RRM
V_R
Peak Repetitive Reverse Voltage
DC Blocking Voltage
I_O
Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-20
±8
-2.7
-10
20
20
0.5
1.1
114
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
A,May,2015