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| CJ5853DC Datasheet, PDF (1/6 Pages) ZP Semiconductor – DFNWB3×2-08L-B Power Management MOSFETs-Schottky | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3Ã2-08L-B Power Management MOSFETs-Schottky
CJ5853DC P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
-20V
20V
RDS(on)MAX
110mΩ@-4.5V
160mΩ@-2.5V
240mΩ@-1.8V
/
ID/IO
-2.7A
1A
DFNWB3Ã2-08L-B
C
D
FEATURES
APPLICATIONS
z Independent Pinout to Each Device to Ease Circuit Design z Li-lon Battery Charging
z Ultra low VF
z High Side DC-DC Conversion Circuits
z Including a CJ2301 MOSFET and a MBR0520 Schottky
(independently) in a package
z High Side Drive for Small Brushless DC Motors
z Power Management in Portableï¼
Battery Powered Products
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
P-MOSFET
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Continuous Drain Current
IDM*
Pulse Drain Current
Schottky Barrier Diode
VRRM
VR
IO
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
PD
Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
TL
Lead Temperature for Soldering Purposes(1/8ââ from case for 10 s)
*Repetitive ratingï¼Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-20
±8
-2.7
-10
20
20
1
1.1
114
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
â/W
â
â
â
E,May,2015
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