CJ502K Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ502K P-CHANNEL MOSFET
V_(BR)DSS
-50 V
R_DS(on)MAX
8Ω@-10V
10Ω@-5V
I_D
-180mA
DESCRIPTION
These miniature surface mount MOSFETs reduce power loss conserve
energy, making this device ideal for use in small power management circuitry.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z Energy efficient
z Miniature surface mount package saves board space
z With protection diode between gate and source
z Very fast switching
MARKING
APPLICATION
z DC−DC converters, power management in portable
battery−powered products such as computers,
printers, cellular and cordless telephones.
z Relay driver
z High-speed line driver
z High-side load switch
z Switching circuits
Equivalent Circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current @t_p <10 μs
Power Dissipation (note 2)
Power Dissipation(note 1)
Symbol
V_DS
V_GS
I_D
I_DM
P_D
Value
-50
±20
-0.18
-0.7
350
420
Thermal Resistance from Junction to Ambient (note 2)
357
R_θJA
Thermal Resistance from Junction to Ambient (note 1)
298
Junction Temperature
T_J
150
Storage Temperature
T_STG
-55~+150
Maximum Lead Temperature for Soldering Purposes , Duration
T_L
260
for 5 Seconds
1. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm²
2. Device m ounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
www.cj-elec.com
1
Unit
V
V
A
A
mW
mW
℃/W
℃/W
℃
℃
℃
A-4,Apr,2015