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CJ4153 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-523 Plastic-Encapsulate MOSFETS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJ4153 N-Channel 20-V(D-S) MOSFET
V(BR)DSS
20V
RDS(on)MAX
570mΩ@4.5V
620mΩ@ 2.5V
700mΩ@1.8V
9500mΩ@1.5V
ID
0.915A
SOT-523
1. GATE
2. SOURCE
3. DRAIN
FEATURE
 Low RDS(on) Improving System Efficiency
 Low Threshold Voltage ,1.5V Rated
 ESD Protected Gate
 Pb-Free Packages are Available
MARKING
APPLICATION
 Load/Power Switches
 Power Supply Converter Circuits
 Battery Management
 Portables like Cell Phones, PDAs,
Digital Cameras, Pagers,etc
Equivalent Circuit
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (note 1)
ID
Power Dissipation (note 1)
PD
Thermal Resistance from Junction to Ambient (note 1)
RθJA
Operating Junction Temperature
TJ
Storage Temperature
Tstg
.
www.cj-elec.com
1
Value
20
±6
0.915
150
833
150
-55~+150
Unit
V
A
mW
℃/W
℃
E,Apr,2015