CJ3439KDW Datasheet, PDF (1/6 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3439KDW N channel+P Channel MOSFET
V_(BR)DSS
20 V
-20V
R_DS(on)MAX
380mΩ@ ^4.5V
450mΩ@ 2.5V
800mΩ@1.8V
520 mΩ@-4.5V
700mΩ@-2.5V
950mΩ(TYP)^@-1.8V
I_D
0.75A
-0.66A
SOT-363
FEATURE
z Surface Mount Package
z Low R_DS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
APPLICATION
z Load/ Power Switching
z ^{Interfacing Switching}
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
MARKING
Equivalent Circuit
D1 G2 ^S2
6
54
1
2
3
S1 G1 D2
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
N-MOSFET
Drain-Source Voltage
V_DS
Typical Gate-Source Voltage
V_GS
Continuous Drain Current (note 1)
I_D
Pulsed Drain Current (tp=10us)
I_DM
P-MOSFET
Drain-Source Voltage
V_DS
Typical Gate-Source Voltage
V_GS
Continuous Drain Current (note 1)
I_D
Pulsed Drain Current (tp=10us)
I_DM
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
R_θJA
Junction Temperature
T_J
Storage Temperature
T_STG
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
T_L
www.cj-elec.com
1
Value
20
±12
0.75
1.8
-20
±12
-0.66
-1.2
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
A
℃/W
℃
℃
℃
D,Mar,2016