CJ3434 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3434 N-Channel MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
42 mΩ@10V
30V
44 mΩ@4.5V
5A
50 mΩ@2.5V
SOT-23
FEATURE
z TrenchFET Power MOSFET
z Low R_DS(ON)
z Typical ESD Protection
APPLICATION
z Ideal for Load Swith and Battery
Protection Applications
MARKING
Equivalent Circuit
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
Symbol
V_DS
V_GS
I_D
I_DM*
R_θJA
T_J
T_STG
T_L
Value
30
±10
5
20
417
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
A-2,Apr,2015