CJ3420 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
CJ3420 N-Channel Enhancement Mode Field Effect Transistor
V_(BR)DSS
R_DS(on)MAX
I_D
24mΩ@ ^10V
20 V
27mΩ@4.5V
42mΩ@2.5V
6A
74mΩ@1.8V
SOT-23
1. GATE
2. SOURCE
3. DRAIN
DESCRIPTION
The CJ3420 uses advanced trench technology to provide excellent
R_DS(on).This device is suitable for use as a uni-directional or bi-directional
load switch.
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Body-Diode Continuous Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J
T_stg
Value
20
±12
6
25
2
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
D,Apr,2015