CJ3406 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETs
CJ3406 N-Channel Enhancement Mode Field Effect Transistor
V_(BR)DSS
30V
R_DS(on)MAX
65 mΩ@10V
105 mΩ@4.5V
I_D
3.6A
DESCRIPTION
The CJ3406 use advanced trench technology to provide excellent
R_DS(ON) and low gate charge. This device is suitable for use as a
load switch or in PWM applications.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
MARKING
Equivalent Circuit
R6
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±20
3.6
15
0.35
357
150
-55~ +150
Unit
V
V
A
A
W
℃/W
℃
℃
www.cj-elec.com
1
B,Mar,2015