CJ3401 Datasheet, PDF (1/5 Pages) ZP Semiconductor – P-Channel Enhancement Mode MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
V_(BR)DSS
-30 V
R_DS(on)MAX
65mΩ@^-10V
75mΩ@-4.5V
90mΩ@^-2.5V
I_D
-4.2A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
APPLICATION
z High dense cell design for extremely low R_DS(ON).
z Load/Power Switching
z Exceptional on-resistance and maximum DC current capability z Interfacing Switching
MARKING
Equivalent Circuit
D
G
S
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_STG
Value
-30
±12
-4.2
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
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1
C,Apr,2015