CJ3400A Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400A N-Channel Enhancement Mode Field Effect Transistor
V_(BR)DSS
30 V
R_DS(on)MAX
32mΩ@^10V
38mΩ@4.5V
45mΩ@2.5V
I_D
5.8A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
APPLICATION
z High dense cell design for extremely low R_DS(ON)
z Load/Power Switching
z Exceptional on-resistance and maximum DC current capability _{z Interfacing Switching}
MARKING
Equivalent Circuit
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±12
5.8
30
400
313
150
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
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1
E,Apr,2015