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| CJ3139KDW Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
V(BR)DSS
9
RDS(on)MAX
PÈ#9
PÈ#9
95 PÈï¼TYPï¼#189
ID
$
GENERRAL DESCRIPTION
This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
Including two P-ch CJ3139K MOSFET (independently) in a package.
SOT-363
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
APPLICATION
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
MARKING
Equivalent Circuit
D1 G2 S2
654
1
23
S1 G1 D2
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source voltage
Typical Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
Tj
Tstg
www.cj-elec.com
1
Value
-20
±12
-0.66
-2.64
150
833
150
-55 ~+150
Unit
V
A
mW
â/W
â
B Nov 3
E,Mar,2016
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