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| CJ3134KW Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-323 Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ3134KW N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
380 mΩ@4.5V
450 mΩ@2.5V
800 mΩ@1.8V
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
MARKING
ID
0.75A
SOT-323
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z Drivers:Relays, Solenoids,
Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source voltage
Typical Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID
IDM
PD
RθJA
Tj
Tstg
www.cj-elec.com
1
Value
20
±12
0.75
3
200
625
150
-55 ~+150
Unit
V
A
mW
â/W
â
D,Jun,2015
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