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| CJ3134KDW Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3134KDW
V(BR)DSS
20 V
Dual N-Channel MOSFET
RDS(on)MAX
380mΩ@ 4.5V
450mΩ@ 2.5V
800mΩ@1.8V
ID
0.75A
SOT-363
FEATURE
ï¬ Lead Free Product is Acquired
ï¬ Surface Mount Package
ï¬ N-Channel Switch with Low RDS(on)
ï¬ Operated at Low Logic Level Gate Drive
ï¬ Equivalent to Two CJ3134K
MARKING
APPLICATION
ï¬ Load/Power Switching
ï¬ Interfacing Switching
ï¬ Battery Management for Ultra Small Portable Electronics
ï¬ Logic Level Shift
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Parameter
Symbol
Drain-source voltage
VDS
Typical Gate-source voltage
VGS
Continuous drain current (t â¤10s)
ID
Power dissipation*
PD
Thermal resistance from junction to ambient
RθJA
Junction temperature
TJ
Storage temperature
Tstg
* Repetitive rating : Pulse width limited by junction temperature.
Value
20
±12
0.75
0.15
833
150
-55~ +150
Unit
V
V
A
W
â/W
â
â
www.cj-elec.com
B Dec,2013
1
G,Mar,2016
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