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CJ2333 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
627 Plastic-Encapsulate MOSFETS
CJ 3-channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
28mâ¦@-4.5V
-12V
32mâ¦@-3.7V
40mâ¦@-2.5V
-6A
63mâ¦@-1.8V
150mâ¦@-1.5V
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
ï¬ TrenchFET Power MOSFET
ï¬ Excellent RDS(on) and Low Gate Charge
MARKING
APPLICATION
ï¬ DC/DC Converter
ï¬ Load Switch for Portable Devices
ï¬ Battery Switch
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (t=300µs)
IDM
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
-12
±8
-6 a
-20
0.35 b
1.1a
357 b
113 a
Junction Temperature
Storage Temperature
TJ
TSTG
150
-55~ +150
a. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.
b. Device mounted on no heat sink.
Unit
V
V
A
A
W
W
â/W
â/W
â
â
www.cj-elec.com
1
B,Apr,2015
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