CJ2324 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETs
CJ2324 N-Channel MOSFET
V_(BR)DSS
100 V
R_DS(on)MAX
I_D
234mΩ@^10V
267mΩ@ 6V
2A
278mΩ@4.5V
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z TrenchFET Power MOSFET
z Low R_DS(ON)
z Surface Mount Package
APPLICATION
z DC/DC Converters
z Load Switch
z LED Backlighting in LCD TVs
MARKING
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
Symbol
V_DS
V_GS
I_D
I_DM*
R_θJA
T_J
T_STG
T_L
Value
100
±20
2
8
357
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
A-3,Apr,2015