CJ2321 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2321
V_(BR)DSS
-20 V
P-Channel 20-V(D-S) MOSFET
R_DS(on)MAX
57mΩ@-4.5V
76mΩ@-2.5V
110mΩ@-1.8V
I_D
-2.9A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z TrenchFET Power MOSFET
APPLICATION
z PA Switch
z Load Switch
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J
T_stg
Value
-20
±12
-2.9
-12
-0.59
0.35
357
150
-50 ~+150
Unit
V
A
W
℃/W
℃
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1
E,May,2016