CJ2312 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2312 N-Channel 20-V(D-S) MOSFET
V_(BR)DSS
20 V
R_DS(on)MAX
31.8mΩ@4.5V
35.6mΩ@2.5V
41.4mΩ@1.8V
FEATURE
z TrenchFET Power MOSFET
I_D
5A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z DC/DC Converters
z Load Switching for Portable Applications
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
t=5s
t=5s
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J
T_stg
Value
20
±8.0
5
20
1.04
0.35
357
150
-50 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
F,Aug,2015