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| CJ2310 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2310 N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
105mΩ@10 V
60 V
3A
125mΩ@4.5V
DESCRIPTION
The CJ2310 uses advanced trench technology to provide excellent
RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a battery protection or in other switching
application.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
ï¬ High power and current handing capability
ï¬ Lead free product is acquired
ï¬ Surface mount package
MARKING
APPLICATION
ï¬ Battery Switch
ï¬ DC/DC Converter
Equivalent Circuit
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
60
±20
3
10
0.35
357
150
-55~+150
Unit
V
V
A
A
W
â/W
â
â
www.cj-elec.com
1
E,Apr,2015
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