CJ2307 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2307 P-Channel 30-V(D-S) MOSFET
V_(BR)DSS
R_DS(on)MAX
-30 V
88mΩ@-10V
138mΩ@-4.5V
I_D
-2.7A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z TrenchFET Power MOSFET
APPLICATION
z ^{Load Switch for Portable Devices}
MARKING
Equivalent Circuit
Maximum ratings ( T_a=25℃ unless otherwise noted)
.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a,b
Continuous Source-Drain Current^a,b
Power Dissipation^a,b
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_S
P_D
R_θJA
T_J
T_stg
Value
-30
±20
-2.7
-0.91
1.1
114
150
-55 ~+150
Unit
V
A
W
℃/W
℃
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1
E,Apr,2015