CJ2306 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2306 N-Channel MOSFET
V_(BR)DSS
R_DS(on)MAX
47mΩ@^10V
30 V
65mΩ@4.5V
FEATURE
z TrenchFET Power MOSFET
I_D
3.16A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (at T_A=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current (T_J=150℃)^a,b
Pulsed Drain Current
Continuous Source Current(Diode Conduction)^a,b
Maximum Power Dissipation^a,b
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction and Storage Temperature Range
Notes :
a. Surface Mounted on 1” ×1” FR4 board, t≤5s.
b. Pulse width limited by maximum junction temperature.
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J, T_stg
www.cj-elec.com
1
Value
30
±20
3.16
20
0.62
0.75
100
-55 to150
Unit
V
A
W
℃/W
℃
D,Apr,2015