CJ2304 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2304
V_(BR)DSS
30 V
N-Channel MOSFET
R_DS(on)MAX
60mΩ@^{10 V}
75mΩ@4.5V
FEATURE
z TrenchFET Power MOSFET
I_D
3.3A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient (t≤5s)
Storage Temperature
Junction Temperature
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J
T_STG
Value
30
±20
3.3
15
0.9
0.35
357
150
-55 ~+150
www.cj-elec.com
1
Unit
V
A
W
℃/W
℃
F,Aug,2015