CJ2301S Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301S P-Channel 20-V(D-S) MOSFET
V_(BR)DSS
R_DS(on)MAX
-20 V
112mΩ@-4.5V
142mΩ@-2.5V
I_D
-2.3A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
TrenchFET Power MOSFET
APPLICATION
zLoad Switch for Portable Devices
zDC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J=150℃)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤ 5s)
Junction Temperature
Storage Temperature
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J
T_stg
Value
-20
±8
-2.3
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
D,Apr,2015
A,Mar,2011